Diac Db2 Datasheet Pdf 14 Top <10000+ UPDATED>

This brings us back to your datasheet. That number you see on the page isn't just a statistic; it is the "Red Line."

Enter the (Diode for Alternating Current).

): The difference between positive and negative breakover voltage is kept to a minimum (typically diac db2 datasheet pdf 14 top

Simple structure allows for low-cost, high-volume production.

Available in through-hole (DO-35) or SMD (SOT23-3L) packages. This brings us back to your datasheet

The serves as a critical bidirectional trigger component designed primarily for power control systems, phase-angle triggering, and AC voltage modulation. Engineers frequently cross-reference the DB2 DIAC technical specifications to secure stable pulse generation when driving power thyristors and TRIACs.

), at which point it enters a conducting (low-resistance) state. Top 14 Key Specifications of DB2 DIAC (Datasheet Summary) Available in through-hole (DO-35) or SMD (SOT23-3L) packages

Without that specific 14th page specification—the —modern light dimmers wouldn't exist. We would still be controlling lights with giant, hot, mechanical rheostats.

| Parameter | Symbol | Typical Value/Range | Unit | Conditions / Notes | | :--- | :--- | :--- | :--- | :--- | | | VBO | ~32 (typically 28 to 36) | V | This is the voltage at which the DIAC switches on. | | Breakover Current | IBO | Low (< 200) | µA | Current at the moment of VBO. | | On-State Voltage | VF, VO | < 5 | V | Voltage drop across the DIAC when conducting (measured at 10mA). | | Repetitive Peak On-State Current | ITRM | 2.0 | A | Maximum allowable peak current (tp=10µs, f=100Hz). | | Surge Peak On-State Current | ITSM | 16 | A | Maximum non-repetitive peak current (tp=10µs). | | Power Dissipation | PD | 150 | mW | On a printed circuit board (PCB). | | Operating Temperature Range | TJ | -40 to +110 | °C | Junction temperature range for operation. | | Storage Temperature Range | TSTG | -55 to +150 | °C | Safe temperature for storage. |

The DB2 DIAC is a two-terminal semiconductor device with a symmetrical structure, often compared to a transistor without a base connection. Structure: It typically features a three-layer ( ) or five-layer semiconductor stack. Terminals: The two electrodes are designated as (Main Terminals 1 and 2) or Anode 1 and Anode 2.