Datasheet — 3sk41
: RF Amplification, IF Amplification, and RF Mixing. Key Features :
The core strength of the 3SK41 lies in its independent . This architecture places two separate control gates in a series-like configuration along a single N-type channel.
When working with the 3SK41, always refer to the latest datasheet for the most up-to-date specifications and characteristics. 3sk41 datasheet
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The 3SK41 is pin-compatible with standard JFETs like the MPF102. The most common package is the 4-pin TO-72 metal can. Viewing from the bottom (leads facing you, tab pointing up): : RF Amplification, IF Amplification, and RF Mixing
): Extremely low (approx. 0.02 pF), which is vital for stability in high-frequency amplifiers. Typically 2.0 to 3.0 dB at 200 MHz. 4. Pinout Configuration
The 3SK41 was engineered to provide high gain and low noise figures in high-frequency circuits. Below are the typical electrical characteristics found in the original datasheet. Maximum 20V Drain Current (Id): Maximum 25mA Gate-Source Voltage (Vgs1/Vgs2): ±10V Power Dissipation (Pd): 200mW Forward Transfer Admittance (|yfs|): 10 to 18 mS Input Capacitance (Ciss): ~5.0 pF Noise Figure (NF): ~2.0 dB at 200 MHz 🛠️ Key Features and Advantages When working with the 3SK41, always refer to
Facilitates easy Automatic Gain Control (AGC) and mixing functions.
VBR(GSS)cap V sub cap B cap R open paren cap G cap S cap S close paren end-sub Maximum absolute rating for both isolated gates Id(max)cap I sub d open paren m a x close paren end-sub Maximum continuous current carrying capacity Power Dissipation PDcap P sub cap D Total allowable power dissipation at room temp Forward Transfer Admittance gfs(min)g sub f s open paren m i n close paren end-sub Minimum transconductance demonstrating signal gain Input Capacitance